Multilevel Leadframe

ABSTRACT

A multilevel leadframe for an integrated circuit package is provided that has a plurality of lead lines formed in a first level and bond pads formed in a second level. A first set of bond pads is arranged in a first row and are separated from an adjacent bond pad by a bond pad clearance distance. A second set of bond pads is arranged in second row adjacent the first row of bond pads. Each bond pad in the second row may be connected to one of the plurality of lead lines on the first level that is routed between adjacent bond pads in the first row. Since the bond pads in the first row are on a different level then the lead lines, the bond pads may be spaced close together.

FIELD OF THE INVENTION

This invention generally relates to packaging of integrated circuits,and in particular to a multilevel leadframe for a dense array ofcontacts.

BACKGROUND OF THE INVENTION

A chip scale package (CSP) is a type of integrated circuit chip carrier.In order to qualify as chip scale, the package typically has an areathat is less than 1.2 times that of the die and is a single-die, directsurface mountable package. Another criterion that is often applied toqualify these packages as CSPs is their ball pitch is typically lessthan 1 mm.

An integrated circuit die may be mounted on an interposer upon whichpads or balls are formed, such as a flip chip ball grid array (BGA)package, or the pads may be etched or printed directly onto the siliconwafer, resulting in a package very close to the size of the silicon die.Such a package may be called a wafer-level chip-scale package (WL-CSP)or (WCSP), or a wafer-level package (WLP), for example.

Flip chip technology is a surface mount technology in which thesemiconductor die is “flipped” over such that the active surface of thedie faces downward to the interconnect substrate. For flip chippackaging, a leadframe may be used as the interconnect substrate toproduce a plastic molded enclosure, also referred to as a “moldedpackage”. The leadframe may be fabricated from a metal, for example,copper, and includes a number of leads which are secured to the frame.Electrical contact between the active surface of the die and theinterconnect substrate is achieved by utilizing an area array of smallsolder “bumps” that are planted on pads on the active surface of thedie. After the die is placed faced down on the interconnect substrate,the temperature is increased and the solder in the flip chip solderbumps reflows, bonding the die directly to the interconnect on thesubstrate. As such, the die makes electrical and mechanical connectiondirectly to the interconnect substrate without the use of bond wires.Flip chip technology provides a configuration that eliminates wirebonding and allows shorter interconnections between circuits andcomponents, which results in thermal, electrical, and mechanicaladvantages.

BRIEF DESCRIPTION OF THE DRAWINGS

Particular embodiments in accordance with the invention will now bedescribed, by way of example only, and with reference to theaccompanying drawings:

FIG. 1 is an illustration of a known chip scale package with an array ofpond pads;

FIG. 2A is a sectional view and FIG. 2B is top view of a portion of aprior art leadframe;

FIG. 3A is a sectional view and FIG. 3B is a top view of a portion of amultilevel leadframe;

FIGS. 4A-4G illustrate a triple etch process for forming the leadframeof FIG. 3;

FIG. 5A is an illustration of an example multilevel leadframe;

FIG. 5B is a more detailed view of a portion of FIG. 5A;

FIG. 6 is an illustration of an example leadframe tape with multipleindividual leadframes formed therein; and

FIG. 7 is a cross-sectional view of a flip chip package with a chipscale package mounted to a multilevel leadframe.

Other features of the present embodiments will be apparent from theaccompanying drawings and from the detailed description that follows.

DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION

Specific embodiments of the invention will now be described in detailwith reference to the accompanying figures. Like elements in the variousfigures are denoted by like reference numerals for consistency. In thefollowing detailed description of embodiments of the invention, numerousspecific details are set forth in order to provide a more thoroughunderstanding of the invention. However, it will be apparent to one ofordinary skill in the art that the invention may be practiced withoutthese specific details. In other instances, well-known features have notbeen described in detail to avoid unnecessarily complicating thedescription.

A ball grid array (BGA) package, wafer-level chip-scale package (WL-CSPor WCSP), and a wafer-level package (WLP) all have one thing in common;they each have a large number of densely packed pins that may beattached to a leadframe. Typically, a chip scale package (CSP) may havean array of pins that are spaced apart by 1 mm, or less.

Current leadframe based flip chip packages are limited by the number ofsolder bumps arranged in an array pattern on the WCSP. An issue withcurrent flip chip leadframes is the amount of space it takes to routethe lead wires through a row of bond pads, based on currently availableleadframe manufacturing capability.

FIG. 1 is an illustration of an example chip scale package 100 with anarray of solder bumps 110 that are formed on each interface signal padsof CSP 100. The array of solder bumps 110 is generally arranged in asquare array or in a rectangular Cartesian grid array in which thehorizontal pitch 120 and the vertical pitch 122 are equal. In order fora leadframe to be mated to CSP 100, the pitch of the bond pads on theleadframe must match the pitch of solder balls 110.

FIGS. 2A, 2B are a sectional view and a top view of a portion of a priorart leadframe 200. Bond pads 210, 212 are in a first row of bond padsthat also includes additional bond pads that are not shown. Likewise,bond pads 221, 223 are in a second row of bond pads that also includesadditional bond pads that are not shown. Each bond pad is connected to alead line, such as lead lines 230-232. The metal sheet from which theleadframe is fabricated has a thickness 240 that will be referred to asthickness D. Leadframe 200 may be fabricated by a double etch process. Afirst etch step 261 removes a portion of the leadframe material to formthe bottom half of lead lines 230-232. A second etch step 262 thenremoves a portion of the leadframe material to form the top half of thelead lines and to define the bond pads.

Notice that lead line 231 must go between bond pads 210 and 212 in orderto connect to bond pad 221. A clearance distance 242, referred to asclearance distance d, is formed during the double etch process. For awet etch process, typically a minimum distance d is equal to thethickness that the etch must be able to remove. Therefore, in this case,clearance distance d is approximately equal to thickness D. Each bondpad has a width 244, referred to as width W, that is determined by whatis required to reliably connect to the solder balls of the CSP. Eachlead line has a width that may be determined by current capacityrequirements, transmission line properties, etc. Thus, the minimal pitch250 that can be fabricated is limited by bond pad width W, the lead linewidth, and two occurrences 242, 243 of clearance distance d.

FIGS. 3A, 3B are a sectional view and a top view of a portion of amultilevel leadframe 300. Bond pads 310, 312 are in a first row of bondpads that also includes additional bond pads that are not shown.Likewise, bond pads 321, 323 are in a second row of bond pads that alsoincludes additional bond pads that are not shown. Each bond pad isconnected to a lead line, such as lead lines 330-333. In this example, acavity is formed in the metal sheet by reducing the thickness of acenter region of the lead frame for an integrated circuit die. Thethickness of the reduced center region is referred to as thickness D.Leadframe 300 may be fabricated by a triple etch process that will bedescribed in more detail below.

Notice again that lead line 331 must go between bond pads 310 and 312 inorder to connect to bond pad 321. A lead line clearance distance d isformed during the etch process. As described above, for a wet etchprocess, typically a minimum distance d is equal to the thickness thatthe etch must be able to remove. Therefore, in this case, clearancedistance d is approximately equal to thickness D. Each bond pad has awidth W, such as width 344, that is determined by a width that isrequired to reliably connect to the solder balls of the CSP. Each leadline has a width that may be determined by current capacityrequirements, transmission line properties, etc.

Notice that a triple etch process allows the lead lines to be formed ona lower level 371 while the bond pads are formed on an upper level 372.This allows bond pads in the first row, such as bond pads 310, 312, tobe spaced closer together because only one clearance distance 345 isrequired, rather than allowing for a lead line and two clearancedistances as in prior art leadframe 200. Thus, in improved leadframe300, the minimal pitch 350 that can be fabricated is limited only bybond pad width W and a single clearance distance d.

Thus, embodiments of the current invention may provide a leadframe forflip chip package application that allows lead routing to accommodatemore bumps in an array pattern.

FIGS. 4A-4G illustrate a triple etch process for forming the leadframeof FIG. 3. Initially, a bare copper sheet is formed into a strip. FIG.4A illustrates a portion of a copper strip 400 that will be formed intoa leadframe. While a copper sheet is typically used for leadframes,other types of conductive material or alloys of copper may also be used;for example, Cu—Sn, Cu—Fe—P, Cu—Cr—Sn—Zn, etc. Various alloys may beselected to use for a particular CSP based on conductivity, tinselstrength, thermal expansion rates, etc.

FIG. 4B illustrates first etch mask 410 that is applied to sheet 400that will be used to form a first etched pattern on sheet 400. Mask 410may be formed on sheet 400 using known application techniques. Forexample, a photo sensitive mask material may be applied to sheet 400 andthen exposed to light through a reticule that contains an image of thepattern to be etched. Unexposed areas may then be washed away with asuitable solvent. Alternatively, the mask may be applied using asilkscreen process, or other known or later developed applicationprocess. Once the first mask 410 is in place, exposed regions such as412, 413 of copper sheet 400 are etched away using suitable etchant. Theetch process is allowed to proceed to a depth E1 as indicated at 414.Depth E1 is less than the thickness of sheet 400.

FIG. 4C illustrates second etch mask 420 that is applied to sheet 400that will be used to form a second etched pattern on sheet 400. Mask 420may be formed on sheet 400 using known application or later developedtechniques, as described above. Previously etched regions, such asindicated at 422, may be covered by second etch mask 420.

Once the second mask 420 is in place, exposed regions such as 424 ofcopper sheet 400 are etched away using suitable etchant as illustratedin FIG. 4D. The etch process is allowed to proceed to a depth E2 asindicated at 426. Depth E2 is less than depth E1. In this manner, atleast two rows of bond pads may be formed in first level of themultilevel lead frame that are separated from an adjacent bond pad by abond pad clearance distance.

Sheet 400 may then inverted and a third mask 430 applied to the backside of sheet 400 as indicated in FIG. 4E using known or later developedtechniques as described above. Once the third mask 430 is in place,exposed regions such as 432 of copper sheet 400 are etched away usingsuitable etchant as illustrated in FIG. 4F. The etch process is allowedto proceed to a depth E3 as indicated at 436. In regions such as whereexposed region 432 is aligned with previously etched region 413, anopening through sheet 400 will be formed, such as indicated by opening434 in FIG. 4F. In this manner, portions of sheet 400 may be completelyremoved to form the lead lines in a second level of multilevel leadframe440, as illustrated in FIG. 3.

FIG. 4G illustrates a cross section of a completely etched multilevelleadframe 440 using the triple etch process described above. Each bondpad in the second row of bond pads may be connected to a lead line onthe first level that is routed between adjacent bond pads in the firstrow. Note that because the bond pads are located on the second level,the lead lines are routed on a different level from the bond pads andtherefore the bond pads may be located closer together.

Note also that a die cavity 442 is formed by the triple etch process.This provides a cavity in which a die is placed in a manner that theback of the die may contact the substrate to which the flip chip packageis mounted. This may improve thermal performance.

In another embodiment, the order of etching may be different. Forexample, mask 420 may be applied first and etching performed to depthE2, followed by application of mask 410 and etching performed to depthE1. In another example, mask 430 may be applied to the bottom side ofcopper sheet 400 while mask 410 or 420 is applied to the top side ofcopper sheet 400 and then both sides may be etched in a singleoperation.

FIG. 5A is an isometric illustration of an example multilevel leadframe440 that was formed using the process described with regard to FIGS.4A-4G. FIG. 5B is a more detailed view of a portion of FIG. 5A. As wasexplained with regard to FIG. 3A, 3B, there is set of lead lines formedin a first level of the multilevel leadframe. Each lead line has a linewidth and is separated from an adjacent lead line by at least a leadline clearance distance. There is a first set of bond pads 510 formed ina second level of the multilevel leadframe arranged in an outer row.Each bond pad is separated from an adjacent bond pad by a bond padclearance distance, and has a pad width that is greater than the linewidth. There is a second set of bond pads 520 arranged in an inner row.Each bond pad of the second set of bond pads is connected to one of thelead lines on the first level that is routed between adjacent bond padsin the first row.

Typically, bond pads in center array 530 may all be connected togetherto provide ground or a voltage supply to an attached chip since there isa limited number of lead lines that may be threaded through the firstand second row of bond pads, such as lead lines 532, 533. Alternatively,center array 530 may be divided into two or more regions and suppliedseparately by lead lines such as 532, 533. Alternatively, one or morelead lines may be diverted from bond pads in the first or second row ofbond pads and used to provide additional connectivity to regions withincenter array 530.

Frame 550 will be trimmed away once the leadframe is attached to a dieand the package molding and contact plating processes are completed.

FIG. 6 is an illustration of an example leadframe tape 600 with multipleindividual leadframes 610 formed therein. Multiple units of a tripleetched, multi-level leadframe may be fabricated in a strip form using astandard, known etching process that is performed three times, asdescribed above in more detail. The number of units in a strip willdepend on the size of each unit. The smaller the size of each individualunits, the larger the number of units that may be fitted in a given sizestrip. In this example, sixteen individual leadframe units 610 areillustrated in each tape frame 620, but it should be understood thateach tape frame may be contain a larger or smaller number of leadframeunits depending on the size of each leadframe unit and the size of thetape.

FIG. 7 is a cross-sectional view of a flip chip package 700 thatincludes chip scale package 704 mounted to a multilevel leadframe 702.Solder bumps 706 are reflowed to provide connectivity between CSP 704and leadframe 702. Molding compound 708 provides a protective coat.

In a typical package process flow, die 704 with solder bumps 706 ispositioned on leadframe 702. Recall that each leadframe is part of atape on which multiple die 704 are positioned. A reflow process thencauses solder bumps 706 to melt and form a connection between theinterface pads on die 704 and the bond pads on leadframe 702. Note thatdie cavity 742 is formed by the triple etch process. This provides acavity in which die 704 is placed in a manner that the back of the diemay contact the substrate to which the flip chip package is mounted.This may improve thermal performance

A molding process is then performed to install mold compound 708 aroundeach die and leadframe. The mold compound is then cured.

Substrate contact regions 710 of each lead line is then plated toprevent oxidation of the copper material. Contact regions 710 may beplated with gold or other precious metals, for example, or may be platedwith a tin or lea-tin or other alloy for easy reflow attachment to asystem substrate or printed circuit board.

Package singulation divides the encapsulated leadframe tape intoindividual flip chip packages. During this process, leadframe 550 istrimmed away so that all of the lead lines are electrically separated.

A multilevel, triple etch leadframe as described herein allows productswith a high number of I/Os to be inserted into packages such as, forexample: FCOL (flip chip on leadframe), QFN (quad-flat no-leads)packages. These packages in turn have good thermal performance becauseof the exposed die back. These packages have good reliability, providegood signal integrity, and are easier to assemble than wire bondedpackages.

Other Embodiments

While the invention has been described with reference to illustrativeembodiments, this description is not intended to be construed in alimiting sense. Various other embodiments of the invention will beapparent to persons skilled in the art upon reference to thisdescription. For example, while a wet etch process has been describedherein, other known or later developed wet or dry etching processes maybe used to form a multilevel leadframe to provide minimal bond padspacing as described herein.

In the examples described herein, the bond pads are all arranged in auniform Cartesian array. In another embodiment, the bond pads may bearranged in a different manner; for example, the bond pads in the secondrow may be offset from the bond pads in the second row to allowstraighter routing of the lead lines that connect to the second row bondpads.

In the examples illustrated herein, the bond pads are depicted as beingrectangular or square. In another embodiment, the bond pads may have adifferent shape, such as circular, oval, etc.

Certain terms are used throughout the description and the claims torefer to particular system components. As one skilled in the art willappreciate, components and processes may be referred to by differentnames and/or may be combined in ways not shown herein without departingfrom the described functionality. This document does not intend todistinguish between components that differ in name but not function. Inthe following discussion and in the claims, the terms “including” and“comprising” are used in an open-ended fashion, and thus should beinterpreted to mean “including, but not limited to . . . .” Also, theterm “couple” and derivatives thereof are intended to mean an indirect,direct, optical, and/or wireless electrical connection. Thus, if a firstdevice couples to a second device, that connection may be through adirect electrical connection, through an indirect electrical connectionvia other devices and connections, through an optical electricalconnection, and/or through a wireless electrical connection.

Although method steps may be presented and described herein in asequential fashion, one or more of the steps shown and described may beomitted, repeated, performed concurrently, and/or performed in adifferent order than the order shown in the figures and/or describedherein. Accordingly, embodiments of the invention should not beconsidered limited to the specific ordering of steps shown in thefigures and/or described herein.

It is therefore contemplated that the appended claims will cover anysuch modifications of the embodiments as fall within the true scope andspirit of the invention.

1. A multilevel leadframe for an integrated circuit package, theleadframe comprising: a plurality of lead lines formed in a first levelof the multilevel leadframe, each lead line having a line width andbeing separated from an adjacent lead line by at least a lead lineclearance distance, wherein each of the plurality of lead lines have acontact region at a first end of the lead line and bond pad at thesecond end of the lead line; a first plurality of bond pads formed in asecond level of the multilevel leadframe arranged in a first row andbeing separated from an adjacent bond pad by a bond pad clearancedistance, each bond pad having a pad width, wherein the pad width isgreater than the line width; a second plurality of bond pads arranged ina second row, wherein each bond pad of the second plurality of bond padsis connected to one of the plurality second ends of the lead lines onthe first level, wherein the lead lines connected to the secondplurality of bond pads is routed between adjacent lead lines connectedto the first plurality of bond pads in the first row, wherein the padwidth is greater than its respective line width; each lead line has awidth that may be determined by design rules for current capacityrequirements, and transmission line properties; and bond pads in thefirst row and second rows are spaced apart by one clearance distancerather than allowing for a lead line and two clearance distances.
 2. Themultilevel leadframe of claim 1, wherein the bond pad clearance distanceis less than twice the lead line clearance distance.
 3. The multilevelleadframe of claim 1, wherein the bond pad clearance distanceapproximately equal to the lead line clearance distance.
 4. Themultilevel leadframe of claim 1, wherein the leadframe has a leadframethickness, and wherein the bond pad clearance distance is approximatelyequal to the leadframe thickness.
 5. The multilevel leadframe of claim1, further comprising a plurality of substrate contacts coupled to thelead lines, wherein the plurality of substrate contacts are arrangedaround a periphery of the multilevel lead frame to form a die cavitysufficiently deep to surround a die when the die is attached to thefirst and second plurality of bond pads.
 6. A method for forming amultilevel leadframe for an integrated circuit, the method comprising:etching a conductive sheet from one side to form a thinner region withina frame region for leads lines and bond pads; etching the conductivesheet to form a plurality of bond pads in a first level of the thinnerregion arranged in at least a first row and a second row, each bond padhaving a pad width, wherein the pad width is greater than its respectiveline width and is separated from an adjacent bond pad by a bond padclearance distance; etching the conductive sheet from an opposite sideto form a plurality of lead lines in a second level of the thinnerregion having a line width and being separated from an adjacent leadline by at least a lead line clearance distance; and wherein each bondpad of the second plurality of bond pads is connected to one of theplurality of lead lines on the second level that is routed betweenadjacent bond pads in the first row.
 7. The method of claim 6, whereinthe bond pad clearance distance is less than twice the lead lineclearance distance.
 8. The method of claim 6, wherein the bond padclearance distance approximately equal to the lead line clearancedistance.
 9. The method of claim 6, wherein the thinner region has aleadframe thickness, and wherein the bond pad clearance distance isapproximately equal to the leadframe thickness.
 10. The method of claim6, wherein etching a conductive sheet from one side to from a thinnerregion also forms a die cavity within the multilevel leadframe.
 11. Apackaged integrated circuit comprising: an integrated circuit die havinga plurality of input/output terminals; multilevel leadframe bond padsbonded to the plurality of input/output terminals, the leadframecomprising: a plurality of lead lines formed in a first level of themultilevel leadframe, each lead line having a line width and beingseparated from an adjacent lead line by at least a lead line clearancedistance; a first plurality of bond pads formed in a second level of themultilevel leadframe arranged in a first row and being separated from anadjacent bond pad by a bond pad clearance distance, each bond pad havinga pad width and wherein the pad width is greater than the line width;and a second plurality of bond pads arranged in a second row, whereineach bond pad of the second plurality of bond pads is connected to oneof the plurality of lead lines on the first level that is routed betweenthe plurality of lead lines but not between the adjacent bond padsassociated with the plurality of lead lines in the first row.
 12. Themultilevel leadframe of claim 11, wherein the bond pad clearancedistance is less than twice the lead line clearance distance.
 13. Themultilevel leadframe of claim 11, wherein the bond pad clearancedistance approximately equal to the lead line clearance distance. 14.The multilevel leadframe of claim 11, wherein the leadframe has aleadframe thickness, and wherein the bond pad clearance distance isapproximately equal to the leadframe thickness.
 15. The multilevelleadframe of claim 11, further comprising a plurality of substratecontacts coupled to the lead lines, wherein the plurality of substratecontacts are arranged around a periphery of the multilevel lead frame toform a die cavity sufficiently deep to surround the integrated circuitdie.